Accession Number:

ADA275078

Title:

MOCVD Growth of GAN, AlN and AlGaN for UV Photodetector Applications

Descriptive Note:

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s):

Report Date:

1993-01-01

Pagination or Media Count:

108.0

Abstract:

For the growth of III-V nitrides, three main problems hinder the production of device quality materials. They are large lattice mismatch between nitride films and substrates, high n-type background concentration and difficulty in p-type doping. In the past year, we focused on the first problem, the lattice mismatch. Different substrates and different orientations of the substrates have been used in order to find a suitable substrate for the nitride growth. An atmospheric horizontal-type metalorganic chemical vapor deposition MOCVD reactor was used for the growth of aluminum nitride gallium nitride and ternary AlGa1-xN

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Optical Detection and Detectors
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE