Accession Number:

ADA275019

Title:

Preparation, Characterization, and Facile Thermolysis of (X2GaP(SiMe3)2)2 (X = Br, I) and (Cl3Ga2P)n; New Precursors to Nanocrystalline Gallium Phosphide

Descriptive Note:

Technical rept.

Corporate Author:

DUKE UNIV DURHAM NC DEPT OF CHEMISTRY

Report Date:

1994-01-18

Pagination or Media Count:

26.0

Abstract:

Br2GaPSiMe32,2 and I2GaPSiMe32,2 have been prepared by the 11 mole ratio reaction of the corresponding galliumIII halide with Me3Si3P. Direct introduction probe mass spectrometry indicates that the former product is dimeric in the gas phase single-crystal X-ray analysis reveals that it is also dimeric in the solid state and it is isostructural with Cl2GaPSiMe32,2, but the crystals are not isomorphous. Br2GaPSiMe32,2 crystallizes in the orthorhombic system, space group Pbca, with a 13.8032, b 16.6522, c 13.6362 A, V 31341 A3, D calc 1.725 g cm- 3 for Z 4 the mean Ga-P bond length in the planar Ga-P-Ga-P core is 2.386 A. Also described is the synthesis Of Cl3Ga2Pn via the 21 mole ratio reaction of GaCI3 and Me3Si3P. All of the title compounds undergo thermolysis at relatively low temperature to yield nanocrystalline GaP. Thermolysis has been studied by thermal gravimetric analysis, and the resultant air-stable powders have been characterized by X-ray diffraction and elemental analysis. synthesis, crystal structure, four-membered ring, gallium phosphide, precursor, nanocrystals.

Subject Categories:

  • Physical Chemistry
  • Crystallography
  • Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE