Modeling Electromagnetic Effects in MMICs for T/R Modules
Final rept. Dec 91-Nov 92,
CALSPAN UB RESEARCH CENTER BUFFALO NY
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This report documents an investigation of circuit modeling of electromagnetic environment effects E3 in the microwave monolithic integrated circuits contained in TR models. The work was performed at Rome Laboratory under an Expert Science and Engineering contract with CalspanUniversity of Buffalo Research Center. Topics include multi-port vector characterizations, data acquisition, CAD testing and validations of models for selected MMICs and models, and recommendations and plans for further assessments of E3 in advanced MMICs, TR modules and multi-chip MCM nodules. An extensive bibliography on contemporary MMIC design and GaAsFET modeling is also included.
- Electrical and Electronic Equipment
- Electricity and Magnetism