Characterization of Semi-Insulating Gallium Arsenide.
Final rept. 18 Nov 92-17 Nov 93,
WESTERN WASHINGTON UNIV BELLINGHAM DEPT OF PHYSICS AND ASTRONOMY
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The project was established 11-18-92 to continue for 12 months. Its purpose has been electrical and optical characterization of samples from semi-insulating SI melt-grown crystals of gallium arsenide GaAs. As a further definition of the projects purpose, the primary goal has been to assist NRL in assessing the properties of SI GaAs crystals grown at NRL, by the vertical zone melt VZM method. A second aspect of this characterization work has involved samples from SI GaAs crystals grown by various commercial vendors, including samples of pre-synthesized GaAs evaluated for its suitability as starting feedstock for VZM growth. Measurements made at Western Washington University WWU under the terms of this project accord with a Statement of Work provided at the outset. These have included a low-field dc electrical transport data for SI GaAs samples, as functions of temperature b near-infrared NIR transmittanceabsorption spectra of polished slabs, with data concerning the well-known EL2 defect determined from NIR absorption strength and spectral form c mid-IR data on absorption caused by carbon acceptors in SI GaAs.
- Electricity and Magnetism
- Inorganic Chemistry