Accession Number:

ADA273771

Title:

Electrical Properties of p-Type GaInP2

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1993-12-01

Pagination or Media Count:

52.0

Abstract:

The GaInP2 n-p junction diode has recently become important to the development of high efficiency GaInP2GaAs dual junction solar cells, which have a demonstrated air mass 1.5 conversion efficiencies in excess of 27. In order to study the effects of long term exposure to the space environment, the GaInP2 n-p junction diodes were irradiated with a 1 MeV electron beam with a fluence of 10exp 16 electronssq cm. Since little is known about deep level defects traps in GaInP2, a deep level transient spectroscopy DLTS study was made to characterize the traps that are thought to dominate the dark current in GaInP2 solar cells. The measurements indicated that there are a number of majority carrier traps in the p-type base of the GaInP2 n-p junction diode. Traps that are identified are located 0.12 to 0.55 eV above the valence band and are attributed to phosphorous vacancies in the lattice.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electric Power Production and Distribution
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE