Accession Number:

ADA273658

Title:

Study of the Homogeneity of InP Wafers

Descriptive Note:

Final rept. 15 Jul 1991-14 Jul 1993

Corporate Author:

VALLADOLID UNIV (SPAIN) SISICA DE LA MATERIA CONVENSADA

Personal Author(s):

Report Date:

1993-07-01

Pagination or Media Count:

80.0

Abstract:

The homogeneity of InP substrate at both microscope and microscopic scale has been studied by Raman microprobe and photocurrent mapping. Raman microprobe was used for any type of substrate, revealing revealing different structural and electronic properties of different extended defects. This study was correlated with photoetching and a relation between revealed defects and Raman features was established. Semiinsulating substrate were analyzed by photocurrent mapping. Three excitation wave lengths were used, revealing different different sources of non uniformly in these wafers. The technique is shown to be quite sensitive to electrical non homogeneities, concerning the iron distribution across the wafer.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Crystallography
  • Atomic and Molecular Physics and Spectroscopy
  • Telemetry
  • Non-Radio Communications

Distribution Statement:

APPROVED FOR PUBLIC RELEASE