Accession Number:

ADA273555

Title:

LPCVD of InN on GaAs(110) Using HN3 and TMIn: Comparison with Si(100) Results

Descriptive Note:

Technical rept.

Corporate Author:

EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1993-12-07

Pagination or Media Count:

7.0

Abstract:

Low-pressure chemical vapor deposition LPCVD of InN and laser- assisted LPCVD on GaAs110 and Si100 using HN3 and trimethyl indium TMIn has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with InN atomic ratio of 1.0 or - 0. 1 and a thickness of more than 20 A the limit of the electron escaping depth for the In3d X-ray photoelectrons were formed on Si100 surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XP spectra. The HeII UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs110, while grains with diameter of approx. 100 nm were observed for InN on Si100.

Subject Categories:

  • Inorganic Chemistry
  • Organic Chemistry
  • Physical Chemistry
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE