Engineering Foundation Conference, Advanced Heterostructure Transistors V, Held in Kona, Hawaii on November 29-December 4, 1992
ENGINEERING FOUNDATION NEW YORK
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The session on Heterostructure FETs concentrated on power devices. L. Eastman of Cornell University reported 5 W at 4 GHz with 70 efficiency and 15 dB of gain from a GE device, and 1 W at 4 GHz with 80 efficiency from Raytheon. J. Wolter described avalanche breakdown via DX centers in AlGaAs, and theoretical optimization of deep submicron HFETs for power handling was reported by M. Das. Silicon-germanium HBTs have made several improvements. K. Ismail of Cairo University and IBM showed how the SiSiGe band lineup can be changed by strain relief, producing barriers to electrons as well as holes. Very high mobilities were reported, and the claim was made that SiGe devices at 77 K may be operationally equivalent to III-V devices at room temperature. This would clearly be important given the fabrication advantages of silicon-based technologies. Silicon-germanium HBT technology seemed to be too complex to insert into digital processes, but SiGe FETs may not be.
- Electrical and Electronic Equipment
- Electrooptical and Optoelectronic Devices