Accession Number:

ADA273342

Title:

High Precision X-Ray Lithographic Masks

Descriptive Note:

Final rept.

Corporate Author:

STANFORD UNIV CA SOLID-STATE ELECTRONICS LAB

Personal Author(s):

Report Date:

1992-01-01

Pagination or Media Count:

82.0

Abstract:

This contract period, was first concerned with winding up the projects on the embedded X-ray Mask structure and on the quantum lithography idea. As a result of developments elsewhere it became clear that the among the most critical issues in achieving high precision X-ray masks were those associated with achieving high precision in both feature size and feature placement in electron beam lithography. Most of the effort in this reporting period was aimed at achieving precision in feature size notably an attack on the problem of proximity effects. There were two approaches 1 A short term approach aimed at correcting effects in existing electron beam pattern generators notably the ETEC MEBES 3 and 4 for feature sizes down 500 nm and 2 A long term approach aimed at avoiding proximity effects by employing low energy electron exposure for feature size below 500 nm

Subject Categories:

  • Printing and Graphic Arts

Distribution Statement:

APPROVED FOR PUBLIC RELEASE