Scanning Probe Lithography. 2. Selective Chemical Vapor Deposition of Copper into Scanning Tunneling Microscope-Defined Patterns
Technical rept., 1 Aug 1992-31 Jul 1993
NEW MEXICO UNIV ALBUQUERQUE DEPT OF CHEMISTRY
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A scanning tunneling microscope STM has been used to define features having critical dimensions ranging from 0.05 to 5.0 micrometer within a self-assembled monolayer resist of octadecylmercaptan, HSCH217CH3, confined to a Au 111 surface. Low temperature chemical vapor deposition CVD methods were used to metalize the STM-patterned surface with Cu. At substrate temperatures near 120 deg C, the Cu CVD precursor, hexafluoroacetylacetonatocopperI-1,5- cyclooctadiene, disproportionates to deposit Cu on the STM-etched portion of the substrate, but not on the unetched methyl-terminated monolayer resist surface. At substrate temperatures significantly above 120 deg C the degree of selectivity is reduced, probably as a result of thermal desorption of the organomercaptan monolayer.
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