Accession Number:

ADA273240

Title:

Ohmic Contacts to Epitaxial and Natural Diamond

Descriptive Note:

Professional paper

Corporate Author:

NAVAL COMMAND CONTROL AND OCEAN SURVEILLANCE CENTER RDT AND E DIV SAN DIEGO CA

Personal Author(s):

Report Date:

1993-10-01

Pagination or Media Count:

5.0

Abstract:

We have used the circular transmission line test structure of Reeves Solid State Electron, 23 1980 487-490 in order to determine the specific contact resistance of various metals to semiconducting diamond. Sample types included highly doped epitaxial films on 100 and 110 type IIa substrates, type IIb diamonds 0.25 mm thick, and type IIb diamonds thinned to 0.05 mm in thickness. Metallizations tested include the carbide forming refractory metals Ti and Mo, as well as Al, Ni, Au, Pt, and Pd. Measured specific contact resistances ranged from 2 x 10exp -5 for contacts to highly doped layers to 1 X 10exp -2 Ohmssq cm for contacts to natural bulk type IIb diamonds. Ohmic contact behavior was not observed for non-carbide forming metallizations on lightly doped type IIb diamond, either in the as-deposited state, or after annealing. Electronic Devices, Diamond technology, Semiconductors.

Subject Categories:

  • Electrical and Electronic Equipment
  • Coatings, Colorants and Finishes
  • Crystallography
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE