Accession Number:

ADA273097

Title:

Growth, Characterization and Device Development in Monocrystalline Diamond Films

Descriptive Note:

Final technical rept. 10 Jan 1990-31 Oct 1993

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

Report Date:

1993-10-31

Pagination or Media Count:

153.0

Abstract:

The effects of hydrogen on cluster binding energy and resulting growth mode during chemical vapor deposition of diamond, the process parameters and the effect of substrates during bias enhanced nucleation, the growth of textured diamond films, the characterization of these films using transmission electron microscopy, Raman spectroscopy and photo-luminescence comprise the growth and thin film characterization research conducted during this grant. Additional work included determination of the surface properties including the negative electron affinity, the growth and characterization of SiGe contacts, and the modeling and characterization of electronic devices. The nucleation of diamond grains on unscratched Si100 wafer is enhanced by four order of magnitude relative to scratched substrates by using negative bias-enhanced microwave plasma CVD in a 2 methanehydrogen plasma for an initial period. In vacuo surface analysis has revealed that the actual nucleation occurs on the amorphous C coating present on the thin SiC layer which forms as the product of the initial reaction with the Si surface. It is believed that the C forms critical clusters which are favorable for diamond nucleation. TEM of nucleation of diamonds on single crystal SiC showed that approximately half of the diamond nuclei were in epitaxial alignment with the SiC substrate. UV photoemission spectroscopy have revealed Schottky barrier heights of 1.0 or -0.2 eV and 1.5 or - 0.2 for the Ti-diamond 111 and 100 interfaces. Diamond, Bias-enhanced nucleation, Microwave plasma CVD, Transmission electron microscopy, Raman spectroscopy, Photoluminescence, Negative electron affinity, Metal-diamond interfaces, SiGe Contacts, Electronic properties, Modeling, MESFETS, C-BN- Diamond system.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Crystallography
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE