Accession Number:

ADA272805

Title:

Alumoxanes: Rationalization of Black Box Materials

Descriptive Note:

End-of-year rept.,

Corporate Author:

HARVARD UNIV CAMBRIDGE MA DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1993-05-18

Pagination or Media Count:

12.0

Abstract:

Amorphous Al203xSiO2y thin films have been grown by atmospheric pressure metal-organic chemical vapor deposition using the single source precursor AlOSiEt332. Characterization by X-ray photoelectron spectroscopy indicated that the films consisted of a mixture of Al2O3, SiO2 and an aluminosilicate. The relative amount of each species was dependent on the deposition temperature and the carrier gas composition. Use of NH3 as the carrier gas resulted in the increased volatility of the precursor by the in situ formation of the low melting Lewis acid-base adduct A1OSiEt33NH3, however, no nitrogen incorporation was observed in these deposited films.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE