Accession Number:

ADA272715

Title:

Growth, Characterization and Device Development in Monocrystalline Diamond Films

Descriptive Note:

Quarterly technical rept. 1 Jul-30 Sep 93,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1993-09-01

Pagination or Media Count:

35.0

Abstract:

For the heteroepitaxial deposition of diamond films, material selection criteria have been used to choose the closely lattice parameter matched substrate of Cu and the subsequent candidate interlayer materials of Ni, Si and Ti, the latter of which hold promise for both pseudomorphic matching to Cu and the promotion of the high density nucleation of diamond. Initial experiments of the CuTi system have shown that a 20 A Ti layer can improve the particle density on Cu by nearly a factor of 10. Copper films have been evaporated under UHV conditions for examination as rectifying contacts. Atomic force microscopy indicated island growth of the Cu. Current-voltage measurements and UPS at 293 K revealed rectifying characteristics and a phi or approx. 1.1 eV, respectively. In research regarding the negative electron affinity of the 2x1 diamond 100 surface, theoretical calculations indicate that it is associated with a monohydride terminated surface. Diamond, Nucleation, Heteroepitaxial growth, Cu substrates, Pseudomorphic interlayers, Cu rectifying contacts, Atomic force microscopy, Negative electron affinity, Monohydride terminated surface

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Coatings, Colorants and Finishes
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE