Accession Number:

ADA272675

Title:

Development of Ultra-Low Noise, High Performance III-V Quantum Well Infrared Photodetectors (QWIPs) for Focal Plane Array Staring Image Sensor Systems

Descriptive Note:

Quarterly progress rept. no. 9, 1 Aug-31 Oct 93,

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1993-11-01

Pagination or Media Count:

42.0

Abstract:

During this reporting period 08-01-93 to 10-31-93 we have continued to make significant progress towards the program goals. We have made a major breakthrough in the development of a new normal incidence p-type strained-layer InGaAsInAlAs QWIP grown on InP by MBE, which achieved an ultra-low dark current and very high detectivity at 8.1 urn and 77 K. The detector is under background limited performance BLIP for T100 K, which is the highest BLIP temperature ever reported for a QWIP. A dark current density of 7x10exp -8 Acm2 and BLIP detectivity of 5.9x10exp 10 Jones were obtained for this QWIP at 77 K. Other tasks performed during this period include i Design and fabrication of a new two-color stacked BTM and BTC QWIP for 3-5 and 8-12 um IR detection, ii design and growth of a normal incidence p-type strained -layer InGaAsGaAs QWIP grown on GaAs by MBE, and iii theoretical and experimental studies of a two- dimensional 2- D circular mesh grating coupler for GaAs QWIP for enhancing the coupling quantum efficiency and responsivity under normal incidence illumination. Detailed results and accomplishments are described in this report. GaAsGaAlAs Quantum well infrared photodetectors QWIPs, p-type strained-layer InGaAsInAlAs QWIP, intersubband absorption, dark current, responsivity, detectivity, 2-D circular mesh metal grating coupler.

Subject Categories:

  • Optical Detection and Detectors
  • Atomic and Molecular Physics and Spectroscopy
  • Optics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE