Accession Number:

ADA272328

Title:

Experiment and Simulation of Sub-0.25 microns Resist Processes for 193-NM Lithography

Descriptive Note:

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

Report Date:

1993-03-05

Pagination or Media Count:

15.0

Abstract:

A model was developed to simulate the behavior of near-surface-imaged resist processes, with the emphasis on modeling of resist processes for 193 nm. Silylation, bilayer, and additive resist processes can all be simulated using this model. For the silylation process, the model was found to be in excellent agreement with experimentally observed silylated resist profiles. This model was used in combination with existing programs that calculate aerial images and single-layer resist profiles to predict process margins for 193-nm 0.5 NA lithography. The results of our simulations for 0.25-micrometers features indicate a depth of focus comparable to the Rayleigh limit or 0.4 micrometer for a single-layer resist process and up to two times this value for near-surface-imaged resists. Focus latitudes greater than the Rayleigh limit are predicted for 0. 18-micrometer features when using near-surface-imaged resists in conjunction with annular illumination. Photolithography, Simulations, Silylation, Modeling

Subject Categories:

  • Coatings, Colorants and Finishes
  • Printing and Graphic Arts

Distribution Statement:

APPROVED FOR PUBLIC RELEASE