Accession Number:

ADA270849

Title:

First Results on InGaAsP Separate Confinement Heterostructure Diode Lasers

Descriptive Note:

Interim technical rept. 15 Mar-9 Sep 93,

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL

Personal Author(s):

Report Date:

1993-09-09

Pagination or Media Count:

31.0

Abstract:

The first attempts of fabrication of InGaAsPGaAs SCH-QW laser structures allowed to obtain laser diodes with threshold current densities as low as 47OAsq cm and differential efficiencies as high as 0.7WA. Long-cavity L approx. 1mm laser diodes have low series resistances of 0.1-0.4ohms. These diodes are suitable for testing of the properties of the Al-free material in continuous wave regime. At the same time, it is evident that further optimization of structure parameters is necessary to reach the ultimate performance expected for InGaAsP SCH QW lasers.

Subject Categories:

  • Electrical and Electronic Equipment
  • Lasers and Masers
  • Electricity and Magnetism
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE