Accession Number:

ADA270705

Title:

Photoluminescence Spectroscopy of Zinc Germanium Diphosphide (ZnGeP2)

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1993-09-13

Pagination or Media Count:

62.0

Abstract:

Zinc germanium diphosphide ZnGeP2 is a chalcopyrite semiconductor with strong nonlinear optical properties and potential application to Air Force interests. The characteristics of this material have been studied using photoluminescence PL spectroscopy. The PL spectrum is dominated by transitions from the conduction band to a deep acceptor level, and features in the spectrum suggest that more than one transition is being observed. The PL is partially polarized, and the degree of polarization appears to differ for each feature in the spectrum. The relative PL intensity of these features are seen to depend upon the wavelength of the excitation source in a fashion which suggests that the observed transitions may originate from three separate conduction bands. These experimentally observed results are found to agree qualitatively with the published band structure of ZnGeP2.

Subject Categories:

  • Inorganic Chemistry
  • Geology, Geochemistry and Mineralogy
  • Atomic and Molecular Physics and Spectroscopy
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE