Accession Number:

ADA270513

Title:

Common Themes and Mechanisms of Epitaxial Growth, Symposium held in San Francisco, California on April 13 - 15, 1993. Volume 312, Materials Research Society,

Descriptive Note:

Corporate Author:

MATERIALS RESEARCH SOCIETY PITTSBURGH PA

Report Date:

1993-04-15

Pagination or Media Count:

360.0

Abstract:

Partial contents From Adatom Migration to Chemical Kinetics Models for MBE, MOMBE and MOCVD The Dynamical Transition to Step-Flow Growth During Homoepitaxy of GaAs 001 Evolution of Roughness on InP Layers Observed by Scanning Force Microscopy Low Temperature Si Homoepitaxy Effects of Impurities on Microstructure Compositional Ordering in Semiconductor Alloys Evolving Surface Cusps During Strained Layer Epitaxy Effects of Minimizing the Driving Force for Epitaxy in the GeSi001 System A Comparison of Two Epitaxial Formation Mechanisms in the SiGe System The Role of Vertical Exchange in the Growth of GaAsAlAs Lateral and Vertical Superlattices Surface Ordering of MBE Grown 001 Ga05A105As-A Theoretical Study and Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAsGaAs Films.

Subject Categories:

  • Crystallography
  • Solid State Physics
  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE