Accession Number:

ADA270424

Title:

Kinetic Aspects of Lattice Mismatch in Molecular Beam Epitaxial Growth on Planar and Patterned Substrates

Descriptive Note:

Final rept. 1 Feb 1990-31 Mar 1993

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

Report Date:

1993-03-31

Pagination or Media Count:

69.0

Abstract:

This final scientific report summarizes the salient accomplishments under the grant AFOSR 90-0184 which include i the first demonstration of the realization of 3-dimensionally confined i.e. quantum box GaAs structures via a one-step MBE growth on pre-patterned nonplanar GaAs111B and GaAs100 substrates and exhibiting optical activity, ii the first demonstration of the kinetics of highly strained InGaAs 3D island and defect formation and the potential use of such coherent islands as quantum boxes, iii introduction of the idea of substrate encoded size-reducing epitaxy SESRE that underlies i above and provides a means for exploiting ii for the creation of a regular array of coherent 3D InAs islands as a quantum box array, iv realization of high quality, highly strained GaAsInGaAsAlGaAs single and multiple quantum well structures via RHEED optimized growth kinetics control and their application to high performance resonant tunnelling diodes, doped-channel MISFETs, and asymmetric Fabry-Perot spatial light modulators in a novel inverted cavity geometry, v the impact of ex-situ processing steps such as dielectric encapsulation and rapid thermal annealing, and vi the use of Ga focused ion beam for in-situ direct-write patterning of GaAs.

Subject Categories:

  • Physical Chemistry
  • Laminates and Composite Materials
  • Crystallography
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE