RF Vacuum Microelectronics
Quarterly progress rept.
RAYTHEON CO LEXINGTON MA RESEARCH DIV
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This document reports progress on the following 1 Stress in evaporated and sputtered moly metalization reduced 2 Two chips evaluated at moderate current levels 6 deviceschip and coated with 200 angstroms of silicon and zirconium carbide respectively 3 High frequency alumina redesigned and 4 Masks for optical lithography for low resolution steps obtained for increased throughput.
- Electrical and Electronic Equipment