Accession Number:

ADA265892

Title:

Bonded Silicon-on-Sapphire Wafers and Devices

Descriptive Note:

Corporate Author:

NAVAL COMMAND CONTROL AND OCEAN SURVEILLANCE CENTER RDT AND E DIV SAN DIEGO CA

Report Date:

1992-09-15

Pagination or Media Count:

4.0

Abstract:

Silicon-on-sapphire SOS has been prepared by direct wafer bonding. The silicon layer was thinned to about 10 micrometers mechanical grinding and chemical etching. P-N junction diodes were fabricated in the bonded SOS and compared with epitaxially grown SOS. The reverse bias leakage current was almost 15 x less in the bonded SOS. A generation lifetime of 10 microseconds can be estimated from the junction leakage. The effects of processing temperatures on the bonded SOS were also studied. Author

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE