Accession Number:

ADA265728

Title:

Nonlinear Laser Spectroscopy Studies of Semiconductor Heterostructures

Descriptive Note:

Final rept. 15 Dec 1989-14 Jan 1993

Corporate Author:

MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s):

Report Date:

1993-01-14

Pagination or Media Count:

81.0

Abstract:

Research progress in quantum optoelectronics has dominated much of the recent literature in semiconductors because of the new physical phenomena which can be observed and because of the potential for new smaller and higher speed devices of importance to communications, computing, and other high information density applications. Much of the work has focused on III-V compounds because it is believed these materials may provide improved performance over silicon. In addition since they are a direct band gap semiconductor, there are also potential optical applications. Under this AFOSR grant, our laboratory has been involved in the general area of the study of the optical physics of semiconductors. These studies have provided new insight into the nature of optical properties as well as material properties. The work has emphasized the application of coherent nonlinear laser spectroscopy methods in the study of bulk GaAs and GaAsAlGaAs quantum wells. This work is based on frequency and time domain four-wave mixing techniques, many of which were developed by our group under earlier AFOSR support. These experiments are enabling us to measure many properties of these systems as well as showing that in heterostructures, the effects of disorder must be included in order to provide a complete understanding.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE