Accession Number:

ADA265599

Title:

Development of Ultra-Low Noise, High Sensitivity Planar Metal Grating Coupled III-V Multiquantum Well Infrared Detectors for Focal Plane Array Staring IR Sensor Systems

Descriptive Note:

Quarterly progress rept. no. 7,

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1993-05-01

Pagination or Media Count:

71.0

Abstract:

During this reporting period we have continued to make progress towards the program goals. We have designed, fabricated, and characterized several new types of 2-D metal grating coupled n-type GaAsAlGaAs, AlASAlGaAs, InAlAsInGaAs, and InGaPGaAs QWIPs for 2-14 micrometers focal plane arrays FPAs staring infrared sensor applications. In addition, a new normal incidence two-color p-type strained layer InGaAsInA1As QWIP has been developed for the first time with highest detectivity and low dark current reported for a p-type QWIP. Specific tasks performed during this period include 1 design, growth, and fabrication of a new normal incidence p-type strained InGaAsInA1As QWIP grown on InP substrate by MBE technique, 2 completed theoretical and experimental studies of four dual mod operation QWIPs fabricated from n-type GaAsAlGaAs, InGaAsInAlAs, and AlAsAiGaAs material systems, 3 completed theoretical and experimental studies of a type-II AlAsAlGaAs QWIP, 4 developed a new 2-D square mesh metal grating coupled structure for an InAlAs InGaAs BTM QWIP with significant improvement in detectors responsivity and detectivity, 5 performed noise characterization on the InGaAsInAlAs QWIP and identified the noise sources in this QWIP, 6 completed numerical simulations of coupling quantum efficiency versus grating periodicity and grating dimension for a 2-D square mesh metal grating coupler formed on both the standard and BTM QWIPs

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE