Accession Number:

ADA265409

Title:

Progress Toward Atomic Layer Epitaxy of Diamond Using Radical Chemistry

Descriptive Note:

Technical rept. no. 18,

Corporate Author:

RICE UNIV HOUSTON TX DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1993-05-29

Pagination or Media Count:

8.0

Abstract:

A novel method for atomic layer epitaxy ALE of diamond using radical reactants under medium vacuum conditions is being developed. Precursor molecules are injected into a stream of thermally-dissociated fluorine atoms, generating radicals in a chemically specific way. We have grown diamond particles at rates of approximately 0.1 micrometershr on polycrystalline copper and nickel wire substrates seeded by diamond particles from continuous flows of FF2, H2, and C2H3 or Ch4 at substrate temperatures of 500-600 deg C and reactor pressures between 10exp-3 and 10exp-1 Torr. Identification of diamond with submicron lateral resolution was made using electron microprobe x-ray fluroescence wavelength dispersive spectroscopy

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE