Accession Number:

ADA265198

Title:

Investigation of Trap Emission Kinetics MOS Capacitors Using A Pump- Probe Charge Integrating Technique

Descriptive Note:

Technical rept.

Corporate Author:

NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1993-05-04

Pagination or Media Count:

31.0

Abstract:

We have developed a Pump-Probe charge integrating measurement technique for studying the emission kinetics of traps in the MSiO2Si system. Essentially, an MOS capacitor is pumped by exposure to a charging pulse. The emission of the charge at short time scales l0 ms, can be measured using a delayed application of a probe pulse, that determines the remainder of the filled traps as a function of delay time. For MOS capacitors grown on a lightly doped p-Si lll substrate we observe an uncommon behavior of the emission kinetics in the initial time regime l00 ms. A possible explanations for this phenomena is the perturbation of the emission cross-section of the probed traps due to the presence of another state in communication with the trap site. our results on this system will be presented along with a comparison to other substrate types and processing parameters.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE