Characterization of the Si/SiO2 Interfere Morphology from Quantum Oscillations in Fowler-Nordheim Tunneling Currents
NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
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As design rules shrink to conform with ULSI device dimensions, gate dielectrics for MOSFET structures are required to be scaled to below-60A where some properties of the device, such as interface roughness, that are negligible for thicker films become critical. Microroughness at the interface of ultrathin MOS capacitors has been shown to degrade these devices.
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