Accession Number:

ADA265071

Title:

Ferroelectric Thin Films. Materials Research Society Symposium Proceedings Held in San Francisco, California on April 16-20, 1990. Volume 200

Descriptive Note:

Corporate Author:

MATERIALS RESEARCH SOCIETY PITTSBURGH PA

Personal Author(s):

Report Date:

1990-01-01

Pagination or Media Count:

348.0

Abstract:

The area of ferroelectric thin films has expanded rapidly recently with the advent of high quality multi-oxide deposition technology. Advances in thin film quality has resulted in the realization of new technologies not achievable through classical bulk ceramic processing techniques. An example of this progress is the co-processing of ferroelectric thin films with standard semiconductor silicon and GaAs integrated circuits for radiation hard, non- volatile memory products. While the development of this class of products is still embryonic, the forecasted market potential is rapidly out distancing the combined developmental effort. Historically the greatest use of bulk ferroelectric material has been in sensor technology, utilizing the pyroelectric and piezoelectric properties of the material. By comparison, a relatively small development effort has been reported for ferroelectric thin film sensor technology, a field sure to provide exciting advances in the future

Subject Categories:

  • Physical Chemistry
  • Electrooptical and Optoelectronic Devices
  • Electricity and Magnetism
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE