Accession Number:

ADA265036

Title:

An Electron Cyclotron Resonance Plasma Process for InP Passivation

Descriptive Note:

Technical rept.

Corporate Author:

NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1993-05-04

Pagination or Media Count:

17.0

Abstract:

In-situ ellipsometry has been used to monitor electron cyclotron resonance ECR plasma oxidation of InP at room temperature in the shadow plasma between a shutter and the sample. This process leaves no detectable excess P at the Inp-oxide interface. A capping layer of SiO2 was grown by ECR chemical-vapor deposition at a substrate temperature of 150 deg C. The samples were rapid- thermal annealed at 500 deg C for 1 min in an oxygen ambient. The dielectric layers were evaluated by current-voltage and capacitance-voltage measurements on metal-oxide n-type InP capacitors. InP Passivation

Subject Categories:

  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE