In-Situ Pre-Oxidation Thermal Cleaning of Silicon in Nitric-Oxide/Hydrochloric Acid Gas Mixture.
PENNSYLVANIA STATE UNIV UNIVERSITY PARK APPLIED RESEARCH LAB
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The purpose of this investigation was to study thermal cleaning of silicon surfaces in Nitric-OxideHydrochloric acid NOHCI gas mixture, and to integrate this cleaning mode as an in situ cleanup applied prior to conventional thermal growth of gate oxide. Results obtained indicate feasibility of this approach. The electrical characteristics of MOS capacitors formed on NOHCI cleaned surfaces did not display significant differences from devices processed in the traditional manner. The results obtained from Bias Temperature Stress test and TXRF surface analysis confirm the NOHCI cleaning methods ability to remove metallic impurities from the water surface. They also show its effectiveness at neutralizing mobile ions.
- Physical Chemistry
- Inorganic Chemistry