Quantum Devices Using Si-Based Superlattices and Structures
Final technical rept. 15 Sep 1989-14 Oct 1992
CALIFORNIA UNIV LOS ANGELES DEPT OF ELECTRICAL ENGINEERING
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The purpose of the research was to perform scientific study and experimentation on potential new Si-based devices for future optical and electronic applications. The research areas included novel detectors, sources, new properties, and other quantum devices using Si molecular beam epitaxy Si- MBE based superlattices and superstructures. With the current ARO support, we have made significant advances in the understanding of optical properties of intersubband transition of SiGeSi multiple quantum wells, and the fabrication of multiple quantum well infrared detectors operating in the mid infrared range. Large many-body effects have been observed in heavily doped Si and SiGeSi quantum well structures. Normal incidence intersubband transitions have been demonstrated for both n and p type SiGeSi quantum well structures. For potential realization of Si-based light sources we have studied the luminescence from monolayer superlattices and strained alloy layers. In the area of quantum transport, a resonant tunneling transistor has been demonstrated.... Intersubband, Quantum Transport, Many-body Effects, Superlattices, Infrared Detectors.
- Electrical and Electronic Equipment
- Quantum Theory and Relativity