Accession Number:

ADA263418

Title:

Wide Band-Gap Semiconductors. 1991 Materials Research Society Symposium Proceedings

Descriptive Note:

Final rept. 15 Sep 1991-14 Sep 1992

Corporate Author:

MATERIALS RESEARCH SOCIETY PITTSBURGH PA

Personal Author(s):

Report Date:

1992-09-01

Pagination or Media Count:

771.0

Abstract:

Topics include Theoretical studies of diamond surface chemistry and diamond-metal interfaces Growth technique for large area mosaic diamond films Chemical vapor deposition of diamond films using wateralcoholorganic-acid solutions Remote ECR plasma deposition of diamond thin films from water- methanol mixtures Deposition of flame grown diamond films in a controlled atmosphere Sequential growth of high quality diamond films from hydrocarbon and hydrogen gases Diamond growth from sputtered atomic carbon and hydrogen gas The CVD diamond nucleation mechanism on Si overlaid with sp2 carbon and investigation into the use of a diffusion barrier in microwave plasma assisted chemical vapor deposition of diamond on iron based substrates Selective nucleation of diamond crystals on the apex of silicon pyramids and Effect of laser irradiation on carbon-implanted copper substrates.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Laminates and Composite Materials
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE