Pseudomorphic Narrow Gap Materials for High Performance Devices
Annual progress technical rept. 15 Feb 89-14 Dec 1992
COLUMBIA UNIV NEW YORK DEPT OF ELECTRICAL ENGINEERING
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InAs field effect transistors 1 micrometer gate length have been fabricated and showed extrinsic intrinsic transconductance as high as 414 mS mm 670mSmm. The cut-off frequency is shown to be more than a factor of two greater than is typical for GaAs based FETs with comparable gate. length. Kink- free AlInAsGaInAsInP HEMTs have been fabricated. Heterojunction transistors with impact ionization at the emitter-base junction i.e, when conduction band offset is larger than the band gap of the base have been analyzed theoretically, and are shown to yield improved performance. Non-radiative Auger recombination in quantum wells has been analyzed in the context of strained lasers. We have also shown theoretically that infrared absorption at normal incidence due to intervalence subband transition can be greatly enhanced in light-hole and heavy-hole inverted strained GaInAsAlInAs quantum wells.
- Electrical and Electronic Equipment