Accession Number:

ADA263069

Title:

Pseudomorphic Narrow Gap Materials for High Performance Devices

Descriptive Note:

Technical rept. 15 Feb 1989-14 Dec 1992

Corporate Author:

COLUMBIA UNIV NEW YORK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1993-01-14

Pagination or Media Count:

14.0

Abstract:

InAs field effect transistors 1 micrometer gate length have been fabricated and showed extrinsic intrinsic transconductance as high as 414 mS mm 670mSmm. The cut-off frequency is shown to be more than a factor of two greater than is typical for GaAs based FETs with comparable gate length. Kink- free AlInAsGaInAsInP HEMTs have been fabricated. Heterojunction transistors with impact ionization at the emitter-base junction i.e, when conduction band offset is larger than the band gap of the base have been analyzed theoretically, and are shown to yield improved performance. Non-radiative Auger recombination in quantum wells has been analyzed in the context of strained lasers. We have also shown theoretically that infrared absorption at normal incidence due to intervalence subband transition am be greatly enhanced in light-hole and heavy-hole inverted strained GaInAsAlInAs quantum wells.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE