Improved Field Emitter Current Densities and Stability Through the Application of a Proprietary Process
Quarter rept. no. 3 Sep-Nov 1992
VARIAN ASSOCIATES INC PALO ALTO CA
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As detailed in the previous reports, the necessary current density 60 Asq cm, linear current density 3 mAmm and stability 2 days to meet the contract goals at least theoretically have been achieved. The next step is to fabricate three terminal devices to demonstrate the remaining contract goal - a one GHz current gain cutoff frequency f sub t. Unlike the traditional Spindt-type of emitter where, because of the circularly symmetric nature of the gate, the electrons can be emitted to an anode spaced at quite large distances away, the planar emitter-gate structure used for the single-crystal approach necessitates an anode spacing on the order of several microns to prevent a significant fraction of the emitted electrons from being collected by the gate. Hence the need to fabricate the 3-terminal devices monolithically. This report details the electron trajectory simulations needed for proper design of the three-terminal devices.
- Electricity and Magnetism