RF Vacuum Microelectrics
Quarterly technical rept. 1 Oct-31 Dec 1992
HONEYWELL SENSOR AND SYSTEM DEVELOPMENT CENTER BLOOMINGTON MN
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We summarize our fifth quarter results and discuss plans for the remainder of the baseline program which is to demonstrate a thin film edge emitter triode with 10 micro-Amicrometer emission current density at less than 250V and which can be modulated at 1 GHz for 1 hour. We completed fabrication of the first thin film edge emitter vacuum transistors this quarter. Extensive DC characterization has been carried out. Triode characteristics have been observed on many devices. Low frequency 1 KHz modulation of the devices has been shown. Parametric testing shows these devices to have the high currents 50 micro-A, high current densities 10 micro-AmM and transconductances 1.5 micro-S necessary to achieve 1 GHz operation. High frequency testing is currently underway.... Vacuum microelectronics, Edge emitter, Triode high frequency devices.
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