Accession Number:

ADA261713

Title:

Optical Characterization of GA(1-x)IN(x)AS(y)SB(1-y)/GASB Alloy and Device Application

Descriptive Note:

Final rept. 1 Nov 1988-30 Oct 1992

Corporate Author:

NORTH CAROLINA AGRICULTURAL AND TECHNICAL STATE UNIV GREENSBORO DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1992-12-15

Pagination or Media Count:

84.0

Abstract:

GaSb and GaInAsSb layers of excellent optical quality with compositions corresponding to the room temperature photoluminescence peak wavelength of 1.7 um to 2.32 um have been grown by liquid phase electroepitaxial LPEE technique. These layers were characterized using X-ray diffraction, energy dispersive X-ray analysis and low temperature Fourier transform photoluminescence PL with emphasis on the latter. The variation in the low temperature photoluminescence spectra of these alloys as a function of the alloy compositions has been the subject of detailed investigation. The nature of the recombination processes has been identified from the temperature and intensity dependence of the PL spectra. N-type doping of the layers has been achieved using tellurium. The PL spectra become increasingly complicated and considerable change in the PL spectra with the excitation intensity is also observed. A systematic and quantitative evaluation of the effects of compensation in GaSb has been examined as a function of Te concentration in the layers under both low and high excitation conditions. Photoreflectance spectroscopy has been assembled for the characterization of semiconductor band structure and surface, PIN photodiode device has been fabricated using the doped layers and characterized using I-V and C-V measurements.... LPEE, LPE, GaInAsSb, GaSb, Photoluminescence.

Subject Categories:

  • Properties of Metals and Alloys
  • Crystallography
  • Electricity and Magnetism
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE