Accession Number:

ADA261346

Title:

SiC Microsensor with Piezoresistive Diamond Sensing Elements

Descriptive Note:

Final rept. Jul-Dec 1992

Corporate Author:

KULITE SEMICONDUCTOR PRODUCTS INC LEONIA NJ

Report Date:

1992-12-31

Pagination or Media Count:

26.0

Abstract:

Advanced microfabrication processes have been developed for novel high temperature pressure sensors utilizing diamond and SiC materials. Such sensors represent a new generation of high temperature piezoresistive sensors. The accomplishments of Phase I include the following a Growth of polycrystalline diamond on Beta-SiC substrates. b The first isolated p-type diamond resistive elements grown on intrinsic diamond. c Establishment of microfabrication processes for sensor manufacture. d Demonstration of a large piezoresistive effect in poly-diamond. e Demonstration of a new field- assisted-bonding process which allows dielectrically isolated SiC elements to be formed.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Crystallography
  • Fluid Mechanics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE