SiC Microsensor with Piezoresistive Diamond Sensing Elements
Final rept. Jul-Dec 1992
KULITE SEMICONDUCTOR PRODUCTS INC LEONIA NJ
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Advanced microfabrication processes have been developed for novel high temperature pressure sensors utilizing diamond and SiC materials. Such sensors represent a new generation of high temperature piezoresistive sensors. The accomplishments of Phase I include the following a Growth of polycrystalline diamond on Beta-SiC substrates. b The first isolated p-type diamond resistive elements grown on intrinsic diamond. c Establishment of microfabrication processes for sensor manufacture. d Demonstration of a large piezoresistive effect in poly-diamond. e Demonstration of a new field- assisted-bonding process which allows dielectrically isolated SiC elements to be formed.
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems
- Fluid Mechanics