Analysis of Transient Photoluminescence Measurements on GaAs and AlGaAs Double Heterostructures
AEROSPACE CORP EL SEGUNDO CA TECHNOLOGY OPERATIONS
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We discuss the analysis of transient photoluminescence measurements and the extraction of carrier recombination lifetimes in GaAs and AlGaAs double heterostructures. In contrast to recently reported claims, we demonstrate that even in regions where the measured decay curves show single exponential behavior, the slopes do not, in general, correspond to any single physical carrier lifetime, such as the minority carrier lifetime. A series of measurements over a range of incident optical intensities is required to extract such lifetimes.
- Electrical and Electronic Equipment