Accession Number:

ADA257695

Title:

IR Materials Producibility

Descriptive Note:

Quarterly rept. no. 1, 12 Aug-31 Oct 1992

Corporate Author:

SRI INTERNATIONAL MENLO PARK CA

Report Date:

1992-11-01

Pagination or Media Count:

33.0

Abstract:

We have included the gradient correction to the local density approximation, and used it to calculate the cohesive energies for HgTe, CdTe, ZnTe, and ZnSe. We find excellent agreement with experiment. The gradient correction was also added to the defect formation energies in HgTe used as a model for HgCdTe. Again, the calculated defect densities are in very good agreement with experiment. We have also examined the band structure of HgCdTe and find it to be highly nonparabolic we have begun to explore the consequences on the defect densities and other device properties. We have examined the properties of dislocations in HgCdTe and conclude that the trapping of carriers at localized states at the dislocation core is not responsible for the observed effects of dislocations on devices. We are currently examining the effect of dislocation-related strain fields on the piezoelectric HgCdTe, and their consequences on device properties. We have begun to calculate the defect formation energies in ZnSe, including relaxation of the nearest neighbors.

Subject Categories:

  • Inorganic Chemistry
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE