Laser-Induced Dissociation of HN sub 3 (DN sub 3) on GaAs (100) K
EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY
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HN3 DN3 molecularly adsorbed on GaAs 100 at 100 K and formed dimers at higher dosages 20 L. Exposing the sample to 308 nm excimer laser radiation caused the dissociation of HN3 into HN and N2 species. The N2, residual HN3 and some HN species desorbed from the surface, as the irradiated sample was further annealed at 200 to 550 K. Both HREELS and XPS results indicated that NH species bonded to the As rather than the Ga atom on GaAs 100 under the present experimental conditions.
- Inorganic Chemistry
- Physical Chemistry
- Lasers and Masers