Heteroepitaxial Diamond Growth
Quarterly rept. no. 2, 1 Jul-30 Sept 1992
RESEARCH TRIANGLE INST (RTI) RESEARCH TRIANGLE PARK NC
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Work during this phase of the diamond program began to focus on issues which were limiting diamond technology 1 The role of oxygen in diamond CVD, 2 Why the limited success of heteroepitaxy on Ni 3 Tools for quantitative microstructural characterization 4 Techniques for separation and lift-off of thin single crystal sheets of diamond 5 Epitaxial consolidation of individual diamond crystals, 6 High quality homoepitaxy. Highlights of this period include expounding the role of O in diamond CVD through surface chemistry, expounding the role of subsurface species to CH3 adsorption on Ni111 surfaces, developing ion implantation annealing procedures for separation of diamond platelets, plan-view TEM characterization of type la and IIb diamonds, epitaxial consolidation of two adjacent diamonds, and critical evaluation of H2CH4, H2CH4CO, H2CO chemistries for homoepitaxial growth.
- Physical Chemistry