Characterization of Semi-Insulating Gallium Arsenide
Final technical rept.
WESTERN WASHINGTON UNIV BELLINGHAM DEPT OF PHYSICS AND ASTRONOMY
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This project was established effective October 1991, to continue through September 30 1992. Its purpose has been the electrical and oprical characterization of samples from melt-grown crystals of gallium arsenide GaAs. Almost all of the samples measured during this 12-month period were undoped nominally undoped, and almost all samples came from crystals grown at NRL by the vertical zone melt VZM method. A series of technical reports during the year when there were new results to report to NRL, plus quarterly reports submitted after 3, 6, and 9 months, provided the bulk of our information to the Crystal Growth Branch of NRL. In this Final Technical Report, a synopsis is provided of that information already submitted on a variety of dates. Measurements made at Western Washington University WWU under the terms of this project have been in accordance with a Statement of Work provided at the outset of the project. These include dc low-field electrical transport measurements in semi-insulating SI samples, as a function of temperature observations of time dependent photoconductivity in this SI GaAs and two types of optical transmittance measurement in the near-infrared near-IR primarily for observation of absorption by EL2 defects, and in the mid-IR for observation of carbon local vibrational mode LVM absorption. Examples are provided in this Report of the four above-mentioned types of measurement. The WWU measurements have complemented work at NRL itself, of crystal growth under varied conditions, of low-temperature high resolution mid-IR and far-IR measurements, and of defect structure microscopic studies.
- *GALLIUM ARSENIDES
- HIGH RESOLUTION
- INFRARED SPECTRA
- CRYSTAL GROWTH
- ELECTRICAL PROPERTIES
- LOW TEMPERATURE
- Electrical and Electronic Equipment