Accession Number:

ADA257216

Title:

Growth Studies of CVD-MBE by In-Situ Diagnostics

Descriptive Note:

Final technical rept. 1 Jul 1989-30 Jun 1992

Corporate Author:

ARIZONA STATE UNIV TEMPE DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

1992-10-29

Pagination or Media Count:

38.0

Abstract:

This is the final technical report for the three year DARPA--URI program Growth Studies of CVD-MBE by in-situ Diagnostics. The goals of the program were to develop non-invasive, real time epitaxial growth monitoring techniques and combine them to gain an understanding of processes that occur during MBE growth from gas sources. We have adapted these techniques to a commercially designed gas source MBE system Vacuum Generators Inc. to facilitate technology transfer out of the laboratory into industrial environments. The in-situ measurement techniques of spectroscopic ellipsometry SE and laser induced fluorescence LIF have been successfully implemented to monitor the optical and chemical properties of the growing epitaxial film and the gas phase reactants. The ellipsometer was jointly developed with the J. Woolam Co. and has become a commercial product. The temperature dependence of group III and V desorption from GaAs and InP has been measured as well as the incident effusion cell fluxes. The temporal evolution of the growth has also been measured both by SE and LIF to show the smoothing of heterojunction surfaces during growth interruption. Complicated microcavity optical device structures have been monitored by ellipsometry in real time to improve device quality. This data has been coupled with the structural information obtained from reflection high energy electron diffraction RHEED to understand the growth processes in binary and ternary bulk III-V semiconductors and heterojunctions.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Crystallography
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE