Growth on the Reconstructed Diamond (100) Surface
CALIFORNIA INST OF TECH PASADENA DIV OF ENGINEERING AND APPLIED SCIENCE
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A thermochemical kinetics analysis has been carried out for growth on the 100-2xlH diamond surface using a pair of previously proposed mechanisms which operate sequentially. Half of the growth on such a surface is accounted for by insertion into dimer bonds, while the other half is accounted for by addition across troughs between dimer bonds. The latter mechanism is slower and therefore controls the over-all growth rate on this surface. This result can explain the success that the latter mechanism has had in predicting growth rates in a variety of systems. We suggest that growth at step sites is favored on steric and thermochemical grounds and can account for atomically smooth surfaces on diamond.
- Solid State Physics