Accession Number:

ADA256924

Title:

Electron Energy Loss Investigation of Hole-Plasmon Excitation Following the In situ Doping of Si(111) by Boron

Descriptive Note:

Technical rept.

Corporate Author:

PITTSBURGH UNIV PA SURFACE SCIENCE CENTER

Report Date:

1992-09-28

Pagination or Media Count:

24.0

Abstract:

High resolution electron energy loss spectroscopy HREELS measurements have been performed on Si111 surfaces heavily p-doped by the decomposition of adsorbed decaborane. After thermal decomposition of the decaborane to produce B atoms on the surface, the low energy electron diffraction pattern shows a square root of 3 x square root of 3 R30 deg periodicity due to the presence of 13 monolayer of boron in the second complete layer. The HREELS data exhibit two strong features 1 the B-Si dipole mode at 96 meV and 2 a broad surface plasmon mode is observed at approx. 100 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer. We have investigated the electron energy dependence of the surface plasmon mode in order to determine the feasibility of using HREELS to determine the depth profile of the free carriers due to B diffusion into the region 100- 1000 A below the surface. Unexpectedly, we find that kinematic factors play an important role in the electron energy range used, 1.5 - 28 eV, and thus limit the degree of quantitative information that can be obtained about the carrier depth profile from HREELS data. Boron decaborane, electron energy loss spectroscopy, Silicon Surface, plasmon, Si111, diffusion.

Subject Categories:

  • Physical Chemistry
  • Atomic and Molecular Physics and Spectroscopy
  • Plasma Physics and Magnetohydrodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE