Accession Number:

ADA256158

Title:

Ultraviolet-Ozone Cleaning of Semiconductor Surfaces

Descriptive Note:

Technical rept.

Corporate Author:

ARMY RESEARCH LAB FORT MONMOUTH NJ ELECTRONICS AND POWER SOURCES DIRECTORATE

Personal Author(s):

Report Date:

1992-10-01

Pagination or Media Count:

48.0

Abstract:

The ultraviolet UVozone surface-cleaning method, which is reviewed in this report, is an effective method of removing a variety of contaminants from silicon as well as many other surfaces. It is a simple-to-use dry process which is inexpensive to set up and operate. It can rapidly produce clean surfaces, in air or in a vacuum system, at ambient temperatures. In combination with a dry method for removing inorganic contamination, the method may meet the requirements for the all-dry cleaning methods that will be necessary for future generations of semiconductor devices. Placing properly precleaned surfaces within a few millimeters of an ozone-producing UV source can produce clean surfaces in less than one minute. The technique can produce near-atomically clean surfaces, as evidenced by Auger electron spectroscopy, ESCA, and ISSSIMS studies. Topics discussed include the variables of the process, the types of surfaces which have been cleaned successfully, the contaminants that can be removed, the construction of an UVozone cleaning facility, the mechanism of the process, UVozone cleaning in vacuum systems, rate-enhancement techniques, safety considerations, effects of UVozone other than cleaning, and applications.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE