Experimental Considerations of Higher Order Parametric X-Rays from Silicon Crystals of Varying Thicknesses
NAVAL POSTGRADUATE SCHOOL MONTEREY CA
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Generation of parametric x-radiation PXR may be described as the Bragg scattering of virtual photons to produce real x-rays which satisfy the Bragg condition N lambda 2d sin theta sub B where theta sub B is the angle between the electron beam and the crystal plane. Enhanced higher order parametric s-radiation from the 220 and the 111 planes of silicon crystals of varying thicknesses were observed, Production of PXR of order n1 for both planes of a 20 u m thick crystal and orders n1, and n2 of the 220 and the n1, n3, and n4 of the 111 planes of the 44 microns and 320 microns crystals were observed. Exploiting the formation and attenuation lengths of silicon crystals of varying thicknesses, higher order x-ray production is enhanced relative to the lower energy first order xray. Photons of 4.5 to 21 keV have been observed.
- Inorganic Chemistry
- Radiation and Nuclear Chemistry
- Particle Accelerators