Accession Number:

ADA256036

Title:

Silicon Nitride Thin Film Production on Si(111)

Descriptive Note:

Technical rept.

Corporate Author:

PITTSBURGH UNIV PA DEPT OF CHEMISTRY

Report Date:

1992-08-27

Pagination or Media Count:

25.0

Abstract:

The production of silicon nitride films by ammonia decomposition on Si111-7x7 has been studied by high-resolution electron energy loss spectroscopy HREELS, Auger electron spectroscopy AES and low-energy electron diffraction LEED. Silicon nitride films of 1 monolayer thickness exhibit a characteristic four mode vibrational spectrum after annealing to 1200 K, while multilayer films produce three vibrational modes at 495, 720 and 1020 cm-1. Upon continued heating of the submonolayer and multilayer nitride films, identical vibrational spectra are obtained, suggesting that both layers form Si3N4. These results are in excellent agreement with the vibrational spectra reported in the literature for Si3N4 layers grown using N atoms on the heated Si111-7x7 surface, signifying that identical nitride films can be grown using ammonia. Si3N4 films grown on Si111 are able to chemisorb ammonia at 300 K, showing that coordinatively unsaturated silicon sites are probably present on the film surface. This is in agreement with other studies which indicate that the growth mechanism for these silicon nitride films involves silicon enrichment at the filmvacuum interface

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE