Accession Number:

ADA255935

Title:

Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronics Applications

Descriptive Note:

Final rept. 1 Apr 1989-31 Mar 1992

Corporate Author:

ILLINOIS UNIV AT URBANA-CHAMAPIGN

Report Date:

1992-06-22

Pagination or Media Count:

77.0

Abstract:

To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-layered compound semiconductor structures, this project has focussed on three specific areas 1 carbon doping of AlGaAsGaAs and InPInGaAs materials for reliable high frequency heterojunction bipolar transistors 2 impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum- well heterostructures and the native oxide stabilization of AlxGa1-xAs-GaAs quantum well heterostructure lasers and 3 non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

Subject Categories:

  • Electrical and Electronic Equipment
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE